| PART |
Description |
Maker |
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| 2SK3114 2SK3114-AZ |
Switching power MOSFET
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
| UPA2701TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| 2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA2706GR UPA2706GR-E2 UPA2706GR-E1 UPA2706TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET
Nch enhancement-type MOSFET
SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ529 2SJ529L 2SJ529S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJK0366DPA RJK0366DPA-00-J0 |
25 A, 30 V, 0.0168 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
